Semiconductor radiation source

ABSTRACT

A semiconductor radiation source includes at least one semiconductor chip that generates radiation; a controller with one or more switching elements configured for pulsed operation of the semiconductor chip; and at least one capacitor body, wherein the semiconductor chip directly electrically connects in a planar manner to the capacitor body, the controller electrically connects to a side of the semiconductor chip opposite the capacitor body, and the controller, the capacitor body and the semiconductor chip are stacked on top of each other so that the capacitor body is located between the control unit and the semiconductor chip.

TECHNICAL FIELD

This disclosure relates to a semiconductor radiation source.

BACKGROUND

There is a need to provide a semiconductor radiation source that can beoperated in a pulsed manner with high currents.

SUMMARY

We provide a semiconductor radiation source including at least onesemiconductor chip that generates radiation, a controller with one ormore switching elements configured for pulsed operation of thesemiconductor chip, and at least one capacitor body, wherein thesemiconductor chip directly electrically connects in a planar manner tothe capacitor body, the controller electrically connects to a side ofthe semiconductor chip opposite the capacitor body, and the controller,the capacitor body and the semiconductor chip are stacked on top of eachother so that the capacitor body is located between the controller andthe semiconductor chip.

We also provide a semiconductor radiation source including at least onesemiconductor chip that generates radiation, and at least one capacitorbody, wherein the semiconductor chip and the capacitor body are stackedon top of each other, and the semiconductor chip directly electricallyconnects in a planar manner to the capacitor body.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A, 2A, 3, 4A, 5A, 6A, 7A, 8A and 8B show schematic sectionalviews of examples of semiconductor radiation sources.

FIGS. 5B, 6B and 7B show schematic top views of examples ofsemiconductor radiation sources.

FIGS. 1B, 2B, 4B and 9 show schematic circuit diagrams of examples ofsemiconductor radiation sources.

FIG. 10 shows a perspective view of an example of a capacitor body forsemiconductor radiation sources.

FIG. 11 shows a schematic sectional representation of a modification ofa semiconductor radiation source.

LIST OF REFERENCE SIGNS

-   1 semiconductor radiation source-   2 semiconductor chip-   21 emitter unit-   22 ridge waveguide-   3 capacitor body-   31 electrical contact surface of the capacitor body-   33 individual capacitor-   4 control unit-   41 switching element-   5 carrier-   55 planar conductor track-   6 bond wire-   10 modification-   D direct, planar electrical connection line-   GND ground contact-   S signal line-   V supply voltage-   a, b, L, T, W dimensions of the capacitor body

DETAILED DESCRIPTION

Our semiconductor radiation source comprises one or more semiconductorchips. The at least one semiconductor chip generates radiation. Thismeans that the radiation emitted during operation of the semiconductorradiation source is generated by the at least one semiconductor chip.The semiconductor chip is preferably a semiconductor laser chip such asan edge-emitting semiconductor laser or a surface-emitting semiconductorlaser, for example, a surface emitting laser with a vertical resonatorstructure, VCSEL, for short. The semiconductor chip can also be asuperluminescent diode.

The semiconductor chip may be configured to generate near ultravioletradiation, visible light or near infrared radiation. A wavelength ofmaximum intensity of the radiation generated by the semiconductor chiplies, for example, at least 360 nm or 400 nm or 700 nm and/or at most1080 nm or 960 nm or 860 nm or 485 nm. It is possible for radiation tobe emitted from a plurality of different spectral regions. For example,a plurality of semiconductor chips with different wavelengths of maximumintensity can be combined with one another in the semiconductorradiation source. Alternatively, only one certain wavelength isgenerated as intended.

The semiconductor radiation source may comprise one or more capacitorbodies. The at least one semiconductor chip may be electrically suppliedwith current via the at least one capacitor body, in particular inpulsed operation. This means that the capacitor body electricallyoperates the semiconductor chip.

The semiconductor chip and the capacitor body may be stacked on top ofeach other. If a plurality of semiconductor chips and/or a plurality ofcapacitor bodies are present, a one-to-one assignment between thestacked semiconductor chips and the capacitor bodies is particularlypreferably present so that only one semiconductor chip and one capacitorbody are stacked on top of each other. Preferably, the semiconductorchip or the semiconductor chips lies/lie completely within a basesurface of the capacitor body, seen in plan view.

The semiconductor chip and the capacitor body may electrically connectto one another in a planar manner. The electrical connection between thesemiconductor chip and the capacitor body is particularly preferably adirect electrical connection without intermediate components. This meansin particular that only a planar electrical connection means such as asolder or an electrically conductive adhesive is located between thesemiconductor chip and the capacitor body. The electrical connectionbetween the semiconductor body and the capacitor body is particularlypreferably bond wire-free.

The semiconductor radiation source may comprise at least onesemiconductor chip that generates radiation and at least one capacitorbody. The semiconductor chip and the associated capacitor body may bestacked on top of each other. Furthermore, the semiconductor chip mayconnect in a planar manner and preferably electrically directly to thecapacitor body.

A problem when switching high currents in a short time is a reduction ofinductances, for example, in the current path between a capacitor, alaser and a switching element such as a field effect transistor. Withthe indicated semiconductor radiation source, the inductance can bereduced so that small pulse rise times and high switching currents aremade possible.

Alternative possibilities to reduce an inductance lie in the closestpossible placement of discrete individual components of thesemiconductor radiation source to one another to minimize the length ofelectrical supply lines. An inductance compensation can be effected inpart by switching a short-circuit current to a part of the circuit. Inthis example, however, the inductance is compensated for at the expenseof the electrical power.

In the semiconductor radiation source described here, capacitor bodiesare used, in particular in the form of silicon chips that on at leastone side have, for example, a metal coating, e.g., of gold so that thecapacitor body can serve as a dual component. On the one hand, thecapacitor body serves as a mounting platform, also referred to as asubmount, for the semiconductor chip. On the other hand, the capacitorbody serves as an energy store for the short laser pulses. Thiscombination means that practically any inductance otherwise resultingfrom bond wires or electrical conductor tracks between the semiconductorchip and the capacitor body is dispensed with. The semiconductor chip ispreferably a thin-film laser chip from which a growth substrate has beenremoved, wherein the capacitor body is preferably used as a carriersubstrate for a semiconductor layer sequence of the semiconductor chip.

With the semiconductor radiation source, a low total inductance can beachieved whereby higher current intensities and/or shorter radiationpulses can be achieved, combined with an increased efficiency. A smallcomponent size can also be realized. The semiconductor radiation sourcecan be used in the automobile industry, for example, in headlights.Since standardized components can be used for the capacitor body, thecosts of the semiconductor radiation source can be reduced. Furthermore,the semiconductor radiation source is preferably highlytemperature-compatible, for example, in headlight applications. This canmean that the semiconductor radiation source can be operated atoperating temperatures in particular of at least 180° C. or 150° C. or120° C.

The semiconductor chip may be a semiconductor laser chip. For example, asubstrate-less semiconductor laser chip, also referred to as thin-filmlaser chip, is used. In this way, the semiconductor chip is preferablyfree of a growth substrate of a semiconductor layer sequence, in whichthere is an active zone that generates the radiation. The capacitor bodycan act as a mechanical support for the semiconductor chip so that thesemiconductor chip is not mechanically self-supporting without thecapacitor body.

The capacitor body may have a larger base area than the semiconductorchip. As an alternative, the capacitor chip and the semiconductor chipcan have the same base area. The same basic area means in particularthat the semiconductor chip and the capacitor chip are congruent whenviewed from the top. Other than this, the semiconductor chip and thecapacitor body may also not be congruent so that in particular thecapacitor body projects beyond the semiconductor chip on one or moresides when viewed from the top. The semiconductor chip is preferablylocated completely on the capacitor body so that the semiconductor chipdoes not project laterally beyond the capacitor body.

The size of an electrical contact area between the semiconductor chipand the capacitor body may amount to at least 35% or 50% or 70% or 90%of the base area of the capacitor body. In other words, between thecapacitor body and the semiconductor chip electrical contact may be madeover the whole area or almost over the whole area.

The electrical contact area between the semiconductor chip and thecapacitor body may have a size of at least 60% or 80% or 95% of a basearea of the semiconductor chip. The base area is in particular a surfacearea of the semiconductor chip when viewed as a plan view. This meansthat the semiconductor chip can be electrically contacted over theentire or almost over the entire base area. In particular, the base areais a main side, that is, a largest side of the semiconductor chip. Forexample, the semiconductor chip is of cuboid or approximately cuboidshape.

The semiconductor chip and the capacitor may body have the same lateraldimensions as seen in plan view with a tolerance of at most 5% or 10% or20% along main directions or along each direction. That is, thesemiconductor chip and the capacitor body can have the same orapproximately the same size when seen in plan view.

A main emission direction of the semiconductor chip may be alignedparallel to the base area of the semiconductor chip and/or to the basesurface of the capacitor body and/or to the electrical contact areabetween the semiconductor chip and the capacitor body. Alternatively,the main emission direction is oriented perpendicular to the base areaand/or to the base surface and/or to the electrical contact area. Theterms “perpendicular” and “parallel” refer to angles of 90° and 0°relative to one another, in particular with a tolerance of at most 5° or10° or 15°.

The semiconductor radiation source may comprise one or more controlunits. The at least one control unit may comprise a switching element ora plurality of switching elements for pulsed operation of thesemiconductor chip. The switching elements may be field effecttransistors, for example. In addition to the at least one switchingelement, the control unit can have an integrated circuit, in particularan application-specific integrated circuit, ASIC for short. The controlunit can also include a memory unit and/or an identification unit. If aplurality of semiconductor chips or a plurality of emitter regions areprovided to generate, in particular, laser radiation, a separateswitching element or several separate switching elements can beassociated with each semiconductor chip and/or each emitter unit.

The control unit may electrically connect to a side of the semiconductorchip opposite the capacitor body. This connection can be made by one ormore conductor tracks or by one or more bond wires. This means that aplanar electrical connection is not necessarily present between thesemiconductor chip and the control unit.

The control unit and the capacitor body may be arranged next to eachother on a common carrier. In this example, the control unit and thecapacitor body preferably do not overlap one another as seen in planview.

The control unit, the capacitor and the semiconductor chip may bestacked on top of each other. These three components can be stackeddirectly on top of each other so that only connecting means such assolders or adhesives are located between these components.

The capacitor body may be located between the control unit and thesemiconductor chip. Alternatively, the semiconductor chip can be locatedbetween the control unit and the capacitor body. The componentsmentioned can each electrically connect directly to one another in aplanar manner.

The semiconductor chip may be a ridge waveguide laser. The semiconductorchip then comprises a ridge waveguide.

The ridge waveguide may be located on a side of the semiconductor chipfacing away from the capacitor body. A semiconductor layer sequence canthus extend continuously across the semiconductor chip between the ridgewaveguide and the capacitor body. This allows the semiconductor layersequence to be efficiently supplied with current directly via thecapacitor on this side of the semiconductor chip. The ridge waveguide islocated, for example, in a p-conducting side of the semiconductor chipso that an n-conducting side of the semiconductor chip can face thecapacitor body and is optionally directly electrically connected to thecapacitor body.

The capacitor body may be a chip. In particular, the capacitor body maybe a monolithic body that cannot be divided into subcomponents asintended. In particular, the capacitor body is based on silicon.

The capacitor body may be composed of a plurality of individualcapacitors electrically connected in parallel. The individual capacitorscan be produced of monolithically integrated circuits in a chip, forinstance on the basis of silicon. It is possible for each of theindividual capacitors to have a separate electrical connection toexternal surfaces of the capacitor body. Alternatively, electrical linesto the individual capacitors can be combined on outer surfaces of thecapacitor body. If a plurality of semiconductor chips is provided forgenerating radiation, each semiconductor chip or each emitter region canbe assigned to one of the individual capacitors.

The direct, planar electrical connection line or connection between thesemiconductor chip and the capacitor body and/or between thesemiconductor chip and the control unit and/or between the control unitand the capacitor body may have only a negligible inductivity. Forexample, the inductance of the connection line or of the electricalconnection is at most 100 pH or 50 pH or 10 pH. Thus, an inductivity ofthe connecting line or the electrical connection is significantlysmaller than in a bond wire.

The capacitor body and/or the individual capacitors may have acapacitance of at least 10 nF or 20 nF or 50 nF. This means that thecapacitor body has a comparatively large capacitance.

The semiconductor radiation source can be surface-mounted. This meansthat electrical connection surfaces for external electrical contactingof the semiconductor radiation source are preferably located in a commonplane. Such electrical connection surfaces are attached, in particular,to the capacitor body or to the control unit or to a carrier of thesemiconductor radiation source.

A total thickness of the capacitor body together with the semiconductorchip may be at least 0.1 mm or 0.2 mm. Alternatively or additionally,this total thickness is at most 1 mm or 0.5 mm. Alternatively oradditionally, mean lateral dimensions of the capacitor body and/or ofthe semiconductor chip, that is in particular the mean edge lengthsthereof seen in plan view, are at least 0.2 mm or 0.4 mm and/or at most2 mm or 1 mm or 0.6 mm. It is possible that the capacitor body has agreater thickness than the semiconductor chip. For example, thethickness of the capacitor body exceeds that of the semiconductor chipby at least one factor of 2 or 5.

The semiconductor radiation source may comprise a plurality of thesemiconductor chips. A single semiconductor chip is alternativelyprovided that can be divided into several emitter regions that can becontrolled electrically together or independently of each other. Thesemiconductor chips or the emitter regions are preferably arrangedtwo-dimensionally in a field as seen in plan view. The arrangement canbe based on a rectangular or hexagonal pattern.

The semiconductor chips and/or emitter regions may be arranged togetheron a single capacitor. Alternatively, groups of semiconductor chipsand/or emitter units may each be mounted on a single capacitor body. Itis also possible for the semiconductor chips to be mounted in adistributed manner on a plurality of capacitor bodies. One capacitorbody can be provided per semiconductor chip and vice versa.

The semiconductor radiation source may be configured to produce laserpulses or radiation pulses with a small mean pulse duration. Forexample, the pulse duration is at least 0.2 ns or 0.5 ns and/or at most5 ns or 2 ns.

Especially in transit time-dependent applications, so-called TOFapplications or time of flight-applications, ever shorter light pulsesare required, even in sub-nanoseconds range. In conventional discretestructures with bond wire contacting, such switching times are not torealize or are to realize only with difficulty due to relatively highinductances, for example, correlated with conductor tracks on printedcircuit boards or with bond wires. Therefore, the semiconductorradiation source described here is particularly suitable forapplications of this type.

In the following, a semiconductor radiation source described here isexplained in more detail with reference to the drawing by examples. Thesame reference signs indicate the same elements in the individualfigures. However, there are no references to scale shown, ratherindividual elements may be illustrated exaggeratedly large for betterunderstanding.

FIG. 1 illustrates an example of a semiconductor radiation source 1. Forexample, the semiconductor radiation source 1 emits near infraredradiation.

The semiconductor radiation source 1 comprises a semiconductor chip 2.For example, the semiconductor chip 2 is an edge-emitting laser. Thesemiconductor radiation source 1 further contains a control unit 4 and acapacitor body 3. The semiconductor chip 2, the capacitor body 3 and thecontrol unit 4 are mounted on a common carrier 5. The carrier 5represents the component carrying and mechanically supporting thesemiconductor radiation source 1.

The semiconductor chip 2 that generates radiation and the capacitor body3 are arranged on the carrier 5 and stacked one on top of the other. Thecontrol unit 4 is located laterally next to the stack. Via a planarconductor track 55 or a continuous electrical contact surface, thecapacitor body 3 and the control unit 4 electrically connect to eachother. The capacitor body 3 and the semiconductor chip 2 connect to eachother via a direct, planar electrical connection D as shown in FIG. 1Bprinted as a bold line. Further electrical connections can be realizedby bond wires 6.

The capacitor body 3 and the semiconductor chip 2 connect to a supplyvoltage V and an ground line GND. Further, a switching element 41 suchas a field effect transistor of the control unit 4 connects to a signalline S. The control unit 4 is composed, for example, of the at least oneswitching element 41 and an application-specific integrated circuit.

On account of the flat electrical connection D, the semiconductor chip 2and the capacitor body 3 electrically connect to one another virtuallywithout inductance. This allows rapid pulse rise times and high currentsto be achieved for operation of the semiconductor chip 2. The currentintensity is, for example, between 5 A and 35 A. For applications in theautomotive field, in particular LIDAR (LIght Detection And Ranging), thecurrent intensities are typically 20 A to 35 A, for example, atapproximately 30 A. In other time of flight-applications the currentintensities are typically 5 A to 15 A, for example, about 10 A.

Deviating from the illustration in FIG. 1A, it is possible that thesemiconductor chip 2 and the capacitor body 3 are accommodated in acommon housing, not shown, also referred to as a package. As analternative to the bonding wires 6, electrical conductor tracks can beused, as also in all examples. Such conductor tracks are guided, forexample, on lateral surfaces of the respective components or along suchlateral surfaces.

In the examples of FIG. 1, an anode-side contact of the semiconductorchip is located on a side facing away from the carrier 5. This sidefacing away from the carrier 5 electrically connects to the control unit4 via one or more bond wires 6 or via at least one electrical conductortrack. Contrary to that, according to FIG. 2, the polarity is reversedso that the anode side of the semiconductor chip 2 faces the carrier 5.The example of FIG. 2 is otherwise identical to that of FIG. 1.

In the example of FIG. 3, both the semiconductor chip 2 and the controlunit 4 are mounted on the common capacitor body 3. The capacitor body 3can thus be used as a mounting platform for the semiconductor chip 2 andthe control unit 4. The carrier 5 is thus optional. An anode side of thesemiconductor chip 2 can face the capacitor body 3 or can also be turnedaway from the latter. This means that the electrical connectionsaccording to FIG. 1B or according to FIG. 2B can be present in FIG. 3.

The example of FIG. 4 illustrates that the control unit 4 as well as thecapacitor body 3 and the semiconductor chip 2 are stacked one on top ofthe other in the order provided. Hence, flat, direct electricalconnection lines D are present on both sides of the capacitor body 3.Other electrical connections are formed by the bond wires 6 oralternatively by metallizations or conductor tracks, in particular alonglateral surfaces.

Deviating from FIG. 4A, the control unit 4 can be used as a mountingplatform so that the carrier 5 can then be dispensed with.

The associated electrical wiring is symbolized in FIG. 4B. On both sidesof the capacitor body 3, the electrical connection lines D are bevirtually inductance-free. The electrical interconnection of FIG. 4Bcorresponds to the interconnection shown in FIG. 1B. Alternatively, theelectrical wiring can be made as illustrated in connection with FIG. 2B.

FIG. 5A again shows a stack arrangement of the control unit 4, thesemiconductor chip 2 and the capacitor body 3. The semiconductor chip 2is located directly between the capacitor body 3 and the control unit 4and connects to the latter via the planar electrical connections D. Whenviewed from the top, the semiconductor chip 2, the capacitor body 3 andthe control unit 4 can be arranged congruently.

In the example of FIG. 6, the semiconductor chip 2 is a ridge waveguidesemiconductor laser with a ridge waveguide 22. The ridge waveguide 22 islocated on a side of the semiconductor chip 2 facing away from thecapacitor body 3. It is possible that the capacitor body 3 acts as asupport for the semiconductor chip 2.

As seen in the top view, it is optionally possible for the capacitorbody 3 to surround the semiconductor chip 2 all the way around in anarrow strip. The semiconductor chip 2 thus lies completely on thecapacitor body 3. A main emission direction of the semiconductor chip 2is oriented along the ridge waveguide 22 and thus parallel to the mainsides of the capacitor body 3.

FIG. 7 shows that the semiconductor chip 2 has a plurality of emitterunits 21. As seen in plan view, the emitter units 21 are arranged, inparticular, in the form of a regular, for example, square grid. Theemitter units 21 can be electrically controlled independently of eachother or can be electrically connected in parallel. The semiconductorchip 2 is, for example, a surface-emitting semiconductor laser with anemission direction perpendicular to main sides of the capacitor body 3.All emitter units 21 are electrically assigned to the common capacitorbody 3.

In the example of FIG. 8, several of the semiconductor chips 2 areprovided to generate radiation. A separate capacitor body 3 may bepresent per semiconductor chip 2 as shown in FIG. 8A, or allsemiconductor chips 2 can be mounted on a common capacitor body 3 asshown in FIG. 8B.

An arrangement corresponding to FIG. 8A can also be provided with regardto the emitter units 21 of FIG. 7.

FIG. 8B further illustrates that the control unit 4 can be integrated inthe carrier 5. In this example, the carrier 5 is based in particular onsilicon. The same can be true for all other examples.

FIG. 8A shows a common control unit 4 for all semiconductor chips 2.Alternatively, a separate control unit 4 can be provided for each stackof a semiconductor chip 2 and an associated capacitor body 3.

FIG. 9 shows an electrical circuit that can likewise be present in allother examples. The circuit of FIG. 9 is constructed analogously to thecircuit of FIG. 2B, but can also be constructed in the same way as inFIG. 1B.

FIG. 9 shows several of the switching elements 41 electrically connectedin parallel. Alternatively or additionally, a plurality of individualcapacitors 33 are present that together form the capacitor body 3. Theindividual capacitors 33 electrically connect in parallel, too.

A current level in the respective electrical supply lines is reduced bythese multiply existing switching elements 41 and/or individualcapacitors 33. In this way, the inductance can be further reduced, inparticular at the electrical connections that are not realized by thedirect, planar connection D.

FIG. 10 shows an example of a capacitor body 3. The capacitor body 3 isbased on silicon. A thickness T of the capacitor body 3 lies, forexample, at approximately 0.25 mm. A length L and a width W lie inparticular in the region of 0.4 mm to 0.8 mm. Electrical contactsurfaces 31 a, 31 b are located on both main sides of the capacitor body3. On an underside, the electrical contact surface 31 b can extendcompletely over the capacitor body 3. On a top side, the contact surface31 a has smaller lateral dimensions a, b than the capacitor body 3. Inthis example, the contact surface 31 a can be located centrally on thetop side of the capacitor body 3. Lengths and widths a, b of the contactsurface 31 a are each, for example, at least 50 μm or 100 μm and/or atmost 200 μm or 100 μm smaller than the associated length L and width Wof the capacitor body 3.

Other than shown in FIG. 10, the contact surface 31 b on the undersidecan also be designed like the contact surface 31 a as illustrated inFIG. 10 so that the underside is then only partially covered by thecontact surface 31 b. It is also possible for the two contact surfaces31 a, 31 b to completely cover the associated main sides of thecapacitor body 3.

For example, the capacitor body 3 is a silicon chip capacitor of thecompany IPDiA, in particular from the series WTSC. The capacitance ofthe capacitor body 3 is, for example, in the range of a few tens of nF.

FIG. 11 shows a modification 10 of the semiconductor radiation source.In this example, the semiconductor chip 2, the capacitor body 3 and thecontrol unit 4 lie next to one another on the carrier 5. Thus, there areno direct, planar electrical connections between the aforementionedcomponents. Hence, inductance of the electrical supply lines isincreased.

Comparing the components of, for example, FIGS. 2 and 11, a lower totalinductance can be achieved with the configuration shown in FIG. 2. It ispossible to achieve greater maximum optical powers, smaller pulse widthsin the time domain and faster pulse rise times as well as an overallhigher efficiency.

For example, in FIGS. 2 and 11 the inductance of the semiconductor chip2 is 100 pH or less. The inductance of the switching element 41, inparticular a field-effect transistor, is, for example, at most 100 pH orat about 100 pH, too. An inductance of approximately 0.25 nH resultsfrom the bond wires 6. In the modification of FIG. 11, because of thecapacitor body 3 an inductance of 200 pH to 700 pH and because of theelectrical lines via the carrier 5 an inductance of about 0.2 nH or moreresults.

In contrast thereto, in construction forms as illustrated in connectionwith FIG. 2, it is possible to achieve an inductance of the capacitorbody 3 of approximately 50 pH and of supply lines via the carrier 5 ofless than 0.1 nH.

Thus, the modification 10 of FIG. 11 has an overall inductance ofapproximately 1.2 nH, whereas a total inductance of only approximately0.5 nH can be achieved in the semiconductor radiation source 1 accordingto FIG. 2, in particular. The inductance is significantly reduced by thesemiconductor radiation source described here.

The components shown in the figures follow, unless indicated otherwise,preferably in the order given in each example directly on top of oneanother. Layers that are not touching in the figures are arranged at adistance from each other. As far as lines are drawn parallel to oneanother, the corresponding surfaces are likewise aligned parallel to oneanother. Likewise, unless indicated otherwise, the relative thicknessratios, relative length rations and the positions of the drawncomponents in relation to one another are correctly reproduced in thefigures.

The semiconductor radiation sources described here are not restricted bythe description on the basis of examples. Rather, this disclosureencompasses any new feature and also any combination of features thatinclude in particular any combination of features in the appendedclaims, even if the feature or combination itself is not explicitlyspecified in the claims or examples.

This application claims priority of DE 10 2017 108 050.3, the subjectmatter of which is incorporated herein by reference.

1-15. (canceled)
 16. A semiconductor radiation source comprising: at least one semiconductor chip that generates radiation; a controller with one or more switching elements configured for pulsed operation of the semiconductor chip; and at least one capacitor body, wherein the semiconductor chip directly electrically connects in a planar manner to the capacitor body, the controller electrically connects to a side of the semiconductor chip opposite the capacitor body, and the controller, the capacitor body and the semiconductor chip are stacked on top of each other so that the capacitor body is located between the controller and the semiconductor chip.
 17. The semiconductor radiation source according to claim 16, wherein the semiconductor chip is a semiconductor laser chip, and the capacitor body has a larger base area than the semiconductor chip and an electrical contact area between the semiconductor chip and the capacitor body is at least 50% of the base area.
 18. The semiconductor radiation source according to claim 16, wherein the semiconductor chip and the capacitor body have equal lateral dimensions along each direction with a tolerance of at most 10%, and an electrical contact area between the semiconductor chip and the capacitor body is at least 80% of a base surface of the semiconductor chip.
 19. The semiconductor radiation source according to claim 16, wherein the semiconductor chip and the capacitor body are soldered to each other, and a main emission direction of the semiconductor chip is parallel to a base surface of the semiconductor chip and a base surface of the capacitor body.
 20. The semiconductor radiation source according to claim 30, further comprising a controller having one or more switching elements for pulsed operation of the semiconductor chip, wherein the controller electrically connects to a side of the semiconductor chip opposite the capacitor body.
 21. The semiconductor radiation source according to claim 20, wherein the controller and the capacitor body are arranged next to each other on a common carrier.
 22. The semiconductor radiation source according to claim 20, wherein the controller, the capacitor body and the semiconductor chip are stacked on top of each other.
 23. The semiconductor radiation source according to claim 20, wherein the controller, the capacitor body and the semiconductor chip are stacked on top of each other so that the semiconductor chip is located between the controller and the capacitor body, and the semiconductor chip electrically connects directly to the controller and the capacitor body.
 24. The semiconductor radiation source according to claim 16, wherein the semiconductor chip is a ridge waveguide laser, a ridge waveguide of the semiconductor chip is arranged on a side of the semiconductor chip facing away from the capacitor body.
 25. The semiconductor radiation source according to claim 16, wherein the capacitor body is monolithically designed as a chip and is based on silicon.
 26. The semiconductor radiation source according to claim 16, wherein the capacitor body is composed of a plurality of individual capacitors that electrically connect in parallel.
 27. The semiconductor radiation source according to claim 16, wherein a direct, planar electrical connection between the semiconductor chip and the capacitor body has an inductance of at most 50 pH.
 28. The semiconductor radiation source according to claim 16, wherein the capacitor body has a capacity of at least 20 nF, the semiconductor radiation source can be surface-mounted, and a total thickness of the capacitor body together with the semiconductor chip is at least 0.1 mm and at most 0.5 mm.
 29. The semiconductor radiation source according to claim 16, comprising a plurality of the semiconductor chips that are regularly arranged in a two-dimensional array as seen in plan view, wherein all the semiconductor chips are arranged together on a single capacitor body.
 30. A semiconductor radiation source comprising: at least one semiconductor chip that generates radiation; and at least one capacitor body, wherein the semiconductor chip and the capacitor body are stacked on top of each other, and the semiconductor chip directly electrically connects in a planar manner to the capacitor body.
 31. The semiconductor radiation source according to claim 16, comprising a plurality of the capacitor bodies and a plurality of the semiconductor chips regularly arranged in a two-dimensional array as seen in plan view, wherein the semiconductor chips are mounted on the capacitor bodies in a one-to-one manner. 